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NDF06N60Z
N-Channel Power MOSFET
600 V, 1.2 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
V DSS (@ T Jmax ) R DS(ON) (MAX) @ 3 A
650 V 1.2 Ω
Rating
Drain ? to ? Source Voltage
Continuous Drain Current, R q JC (Note 1)
Continuous Drain Current
T A = 100 ° C, R q JC (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Power Dissipation, R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, L = 6.3 mH,
I D = 6.0 A
ESD (HBM) (JESD22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 13)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
Symbol
V DSS
I D
I D
I DM
P D
V GS
E AS
V esd
V ISO
dv/dt
I S
Value
600
7.1
4.5
28
35
± 30
113
3000
4500
4.5
6.0
Unit
V
A
A
A
W
V
mJ
V
V
V/ns
A
G (1)
N ? Channel
D (2)
S (3)
3
Maximum Temperature for Soldering Leads T L 260 ° C
Operating Junction and T J , T stg ? 55 to ° C
Storage Temperature Range 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 6.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1 1
2 2
3
NDF06N60ZG NDF06N60ZH
TO ? 220FP TO ? 220FP
CASE 221D CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
February, 2013 ? Rev. 6
1
Publication Order Number:
NDF06N60Z/D
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